Product Summary

The MRF6VP11KH is a RF Power Field Effect Transistor designed primarily for pulsed wideband applications with frequencies up to 150 MHz. The MRF6VP11KH is unmatched and is suitable for use in industrial, medical and scientific applications.

Parametrics

MRF6VP11KH absolute maximum ratings: (1)Drain-Source Voltage, VDSS: -0.5, +110 Vdc; (2)Gate-Source Voltage, VGS: -6.0, +10 Vdc; (3)Storage Temperature Range, Tstg: - 65 to +150℃; (4)Case Operating Temperature, TC: 150℃; (5)Operating Junction Temperature, TJ: 200℃.

Features

MRF6VP11KH features: (1)Characterized with Series Equivalent Large--Signal Impedance Parameters; (2)CW Operation Capability with Adequate Cooling; (3)Qualified Up to a Maximum of 50 VDD Operation; (4)Integrated ESD Protection; (5)Designed for Push--Pull Operation; (6)Greater Negative Gate--Source Voltage Range for Improved Class C Operation; (7)RoHS Compliant; (8)In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

Diagrams

MRF6VP11KH diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF6VP11KHR5
MRF6VP11KHR5
Freescale Semiconductor
Transistors RF MOSFET Power VHV6 130MHZ 1000W NI1230
Data Sheet
0-1: $115.58
1-10: $112.07
10-25: $108.78
25-50: $108.78
MRF6VP11KHR6
MRF6VP11KHR6
Freescale Semiconductor
Transistors RF MOSFET Power VHV6 130MHZ 1000W NI1230
Data Sheet
0-71: $159.78
71-100: $99.86
100-150: $99.86